sqm120p06-07l www.vishay.com vishay siliconix s12-1847-rev. b, 30-jul-12 1 document number: 67026 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive p-channel 60 v (d-s) 175 c mosfet features ?trenchfet ? power mosfet ? package with low thermal resistance ?100 % r g and uis tested ? aec-q101 qualified d ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) - 60 r ds(on) ( ? ) at v gs = - 10 v 0.0067 r ds(on) ( ? ) at v gs = - 4.5 v 0.0088 i d (a) - 120 configuration single s g d p-channel mosfet to-263 s d g top view ordering information package to-263 lead (pb)-free and halo gen-free sqm120p06-07l-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 60 v gate-source voltage v gs 20 continuous drain current a t c = 25 c a i d - 120 a t c = 125 c - 98 continuous source curr ent (diode conduction) a i s - 120 pulsed drain current b i dm - 480 single pulse avalanche current l = 0.1 mh i as - 80 single pulse avalanche energy e as 320 mj maximum power dissipation b t c = 25 c p d 375 w t c = 125 c 125 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 c/w junction-to-case (drain) r thjc 0.40
sqm120p06-07l www.vishay.com vishay siliconix s12-1847-rev. b, 30-jul-12 2 document number: 67026 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. ? ? ? ? ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. ? specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 60 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.5 - 2.0 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 60 v - - - 1 a v gs = 0 v v ds = - 60 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 60 v, t j = 175 c - - - 250 on-state drain current a i d(on) v gs = - 10 v v ds ??? - 5 v - 120 - - a drain-source on-state resistance a r ds(on) v gs = - 10 v i d = - 30 a - 0.0056 0.0067 ? v gs = - 10 v i d = - 30 a, t j = 125 c - - 0.0110 v gs = - 10 v i d = - 30 a, t j = 175 c - - 0.0130 v gs = - 4.5 v i d = - 20 a - 0.0070 0.0088 forward transconductance b g fs v ds = - 15 v, i d = - 30 a - 90 - s dynamic b input capacitance c iss v gs = 0 v v ds = - 25 v, f = 1 mhz - 11 423 14 280 pf output capacitance c oss - 1034 1295 reverse transfer capacitance c rss - 809 1015 total gate charge c q g v gs = - 10 v v ds = - 30 v, i d = - 110 a - 180 270 nc gate-source charge c q gs -31- gate-drain charge c q gd -43- gate resistance r g f = 1 mhz 1.1 2.27 3.5 ? turn-on delay time c t d(on) v dd = - 30 v, r l = 0.27 ? i d ? - 110 a, v gen = - 10 v, r g = 1 ? -1523 ns rise time c t r -2335 turn-off delay time c t d(off) - 97 146 fall time c t f -3248 source-drain diode ratings and characteristics b pulsed current a i sm - - - 480 a forward voltage v sd i f = - 100 a, v gs = 0 v - - 0.95 - 1.5 v
sqm120p06-07l www.vishay.com vishay siliconix s12-1847-rev. b, 30-jul-12 3 document number: 67026 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 40 80 120 160 200 0 3 6 9 12 15 v gs =10vthru5v v gs =3v v gs =4v v d s - drain-to- s ource voltage (v) i d - drain current (a) 0 40 80 120 160 200 0 1632486480 i d - drain current (a) - tran s conductance ( s ) g f s t c = 125 c t c = 25 c t c = - 55 c c r ss ss c o ss v d s - drain-to- s ource voltage (v) c - capacitance (pf) 0 30 60 90 120 150 012345 t c = 125 c t c = 25 c t c = - 55 c v gs - g ate-to- s ource voltage (v) i d - drain current (a) 0 0.004 0.008 0.012 0.016 0.020 0 20406080100120 v gs =4.5v v gs =10v r d s (on) - on-re s i s tance ( ) i d - drain current (a) 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 180 200 i d = 110 a v d s =30v q g - total g ate charge (nc) v gs - g ate-to- s ource voltage (v)
sqm120p06-07l www.vishay.com vishay siliconix s12-1847-rev. b, 30-jul-12 4 document number: 67026 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diod e forward voltage threshold voltage drain source breakdown vs . junction temperature 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 i d =30a v gs =10v t j - junction temperature (c) (normalized) r d s (on) - on-re s i s tance 0 0.01 0.02 0.03 0.04 0.05 0246810 r d s (on) - on-re s i s tance ( ) v gs - g ate-to- s ource voltage (v) t j =25 c t j = 150 c 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 v s d - s ource-to-drain voltage (v) i s - s ource current (a) t j = 25 c t j = 150 c - 0.6 - 0.3 0 0.3 0.6 0.9 1.2 - 50 - 25 0 25 50 75 100 125 150 175 i d =5ma i d = 250 a v gs (th) variance (v) t j - temperature (c) - 50 - 25 0 25 50 75 100 125 150 175 v ds - drain-to-source voltage (v) t j - junction temperature (c) i d =10ma - 80 - 76 - 72 - 68 - 64 - 60
sqm120p06-07l www.vishay.com vishay siliconix s12-1847-rev. b, 30-jul-12 5 document number: 67026 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient v ds - drain-to-source voltage (v) - drain current (a) i d t c = 25 c single pulse 1 ms 100 ms, 1 s, 10 s, dc 100 s r ds(on) * limited by 10 ms 0.01 0.1 1 10 100 bvdss limited i dm limited i d limited 0.01 0.1 1 10 100 1000 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 1 0.01 0.001 0.1 0.0001 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance
sqm120p06-07l www.vishay.com vishay siliconix s12-1847-rev. b, 30-jul-12 6 document number: 67026 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs ? - normalized transient thermal impedance junction to ambient (25 c) ? - normalized transient thermal impedance junction to case (25 c) ? are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67026 . sq u are wave p u lse d u ration (s) 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 normalized eff ective transient thermal impedance 1 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5
ordering information www.vishay.com vishay siliconix revision: 06-jul-16 1 document number: 67164 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak / to-263 and to-262 ordering codes for the sq rugged series power mosfets in the d 2 pak / to-263 and to-262 packages: note a. old ordering code is obsolete and no longer valid for new orders datasheet part number o ld ordering code a new ordering code sqm100n04-2m7 sqm100n04-2m7-ge3 sqm100n04-2m7_ge3 sqm100n10-10 sqm100n10-10-ge3 sqm100n10-10_ge3 sqm110n05-06l sqm110n05-06l-ge3 sqm110n05-06l_ge3 sqm110p06-8m9l sqm110p06-8m9l-ge3 sqm110p06-8m9l_ge3 sqm120n02-1m3l sqm120n02-1m3l-ge3 sqm120n02-1m3l_ge3 sqm120n03-1m5l sqm120n03-1m5l-ge3 sqm120n03-1m5l_ge3 sqm120n04-1m7 sqm120n04-1m7-ge3 sqm120n04-1m7_ge3 sqm120n04-1m7l sqm120n04-1m7l-ge3 sqm120n04-1m7l_ge3 sqm120n04-1m9 sqm120n04-1m9-ge3 sqm120n04-1m9_ge3 sqm120n06-06 sqm120n06-06-ge3 sqm120n06-06_ge3 sqm120n06-3m5l sqm120n06-3m5l-ge3 sqm120n06-3m5l_ge3 sqm120n10-09 sqm120n10-09-ge3 sqm120n10-09_ge3 sqm120n10-3m8 sqm120n10-3m8-ge3 sqm120n10-3m8_ge3 sqm120p04-04l sqm120p04-04l-ge3 sqm120p04-04l_ge3 sqm120p06-07l sqm120p06-07l-ge3 sqm120p06-07l_ge3 sqm120p10-10m1l - sqm120p10_10m1lge3 sqm200n04-1m1l sqm200n04-1m1l-ge3 sqm200n04-1m1l_ge3 sqm200n04-1m7l sqm200n04-1m7l-ge3 sqm200n04-1m7l_ge3 sqm200n04-1m8 sqm200n04-1m8-ge3 sqm200n04-1m8_ge3 sqm25n15-52 sqm25n15-52-ge3 sqm25n15-52_ge3 sqm35n30-97 sqm35n30-97-ge3 sqm35n30-97_ge3 sqm40010el - sqm40010el_ge3 sqm40n10-30 sqm40n10-30-ge3 sqm40n10-30_ge3 sqm40n15-38 sqm40n15-38-ge3 sqm40n15-38_ge3 sqm40p10-40l sqm40p10-40l-ge3 sqm40p10-40l_ge3 sqm47n10-24l sqm47n10-24l-ge3 sqm47n10-24l_ge3 sqm50020el - sqm50020el_ge3 sqm50n04-4m0l sqm50n04-4m0l-ge3 sqm50n04-4m0l_ge3 sqm50n04-4m1 sqm50n04-4m1-ge3 sqm50n04-4m1_ge3 sqm50p03-07 sqm50p03-07-ge3 sqm50p03-07_ge3 sqm50p04-09l sqm50p04-09l-ge3 sqm50p04-09l_ge3 sqm50p06-15l sqm50p06-15l-ge3 sqm50p06-15l_ge3 sqm50p08-25l sqm50p08-25l-ge3 sqm50p08-25l_ge3 sqm60030e - sqm60030e_ge3 sqm60n06-15 sqm60n06-15-ge3 sqm60n06-15_ge3 sqm60n20-35 SQM60N20-35-GE3 sqm60n20-35_ge3 sqm70060el - sqm70060el_ge3 sqm85n15-19 sqm85n15-19-ge3 sqm85n15-19_ge3 sqv120n10-3m8 sqv120n10-3m8-ge3 sqv120n10-3m8_ge3 sqv120n06-4m7l - sqv120n06-4m7l_ge3
package information www.vishay.com vishay siliconix revison: 30-sep-13 1 document number: 71198 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-263 (d 2 pak): 3-lead notes 1. plane b includes maximum featur es of heat sink tab and plastic. 2. no more than 25 % of l1 ca n fall above seating plane by max. 8 mils. 3. pin-to-pin coplanarity max. 4 mils. 4. *: thin lead is for sub, syb. thick lead is for sum, sym, sqm. 5. use inches as the primary measurement. 6. this feature is for thick lead. -a- -b- d1 d4 a a e b2 b e a c2 c l2 d l3 l detail ?a? e1 e2 k e3 d2 d3 6 0.010 m a m 2 pl detail a (rotated 90) s ection a-a 0 - 5 l1 l4 m c1 c b1 b inches millimeters dim. min. max. min. max. a 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 c* thin lead 0.013 0.018 0.330 0.457 thick lead 0.023 0.028 0.584 0.711 c1 thin lead 0.013 0.017 0.330 0.431 thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 d 0.340 0.380 8.636 9.652 d1 0.220 0.240 5.588 6.096 d2 0.038 0.042 0.965 1.067 d3 0.045 0.055 1.143 1.397 d4 0.044 0.052 1.118 1.321 e 0.380 0.410 9.652 10.414 e1 0.245 - 6.223 - e2 0.355 0.375 9.017 9.525 e3 0.072 0.078 1.829 1.981 e 0.100 bsc 2.54 bsc k 0.045 0.055 1.143 1.397 l 0.575 0.625 14.605 15.875 l1 0.090 0.110 2.286 2.794 l2 0.040 0.055 1.016 1.397 l3 0.050 0.070 1.270 1.778 l4 0.010 bsc 0.254 bsc m - 0.002 - 0.050 ecn: t13-0707-rev. k, 30-sep-13 dwg: 5843
an826 vishay siliconix document number: 73397 11-apr-05 www.vishay.com 1 recommended minimum pads for d 2 pak: 3-lead 0.635 (16.129) recommended minimum pads dimensions in inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) return to index
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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